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Ultrasensitive all-2D MoS(2) phototransistors enabled by an out-of-plane MoS(2) PN homojunction
Two-dimensional transition metal dichalcogenide-based photodetectors have demonstrated potential for the next generation of 2-dimensional optoelectronics. However, to date, their sensitivity has not been superior to that of other technologies. Here we report an ultrasensitive two-dimensional photode...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2017
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5603552/ https://www.ncbi.nlm.nih.gov/pubmed/28924234 http://dx.doi.org/10.1038/s41467-017-00722-1 |