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Ultrasensitive all-2D MoS(2) phototransistors enabled by an out-of-plane MoS(2) PN homojunction

Two-dimensional transition metal dichalcogenide-based photodetectors have demonstrated potential for the next generation of 2-dimensional optoelectronics. However, to date, their sensitivity has not been superior to that of other technologies. Here we report an ultrasensitive two-dimensional photode...

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Detalles Bibliográficos
Autores principales:	Huo, Nengjie, Konstantatos, Gerasimos
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5603552/ https://www.ncbi.nlm.nih.gov/pubmed/28924234 http://dx.doi.org/10.1038/s41467-017-00722-1

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