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Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O(2) plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O(2) plasma time and the number of thermal ALD cycles in a supercycle ca...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5605484/ https://www.ncbi.nlm.nih.gov/pubmed/28929410 http://dx.doi.org/10.1186/s11671-017-2308-1 |
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author | Huang, Ruomeng Ye, Sheng Sun, Kai Kiang, Kian S. de Groot, C. H. (Kees) |
author_facet | Huang, Ruomeng Ye, Sheng Sun, Kai Kiang, Kian S. de Groot, C. H. (Kees) |
author_sort | Huang, Ruomeng |
collection | PubMed |
description | A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O(2) plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O(2) plasma time and the number of thermal ALD cycles in a supercycle can be adjusted to achieve fine tuning of film resistivity and carrier concentration up to six orders of magnitude without extrinsic doping. The concentration of hydrogen defects are believed to play a major role in adjusting the electrical properties of ZnO films. Kelvin probe force microscopy results evidently show the shift of Fermi level in different ZnO films and are well associated with the changing of carrier concentration. This reliable and robust technique reported here clearly points towards the capability of using this method to produce ZnO films with controlled properties in different applications. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1186/s11671-017-2308-1) contains supplementary material, which is available to authorized users. |
format | Online Article Text |
id | pubmed-5605484 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-56054842017-09-27 Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition Huang, Ruomeng Ye, Sheng Sun, Kai Kiang, Kian S. de Groot, C. H. (Kees) Nanoscale Res Lett Nano Express A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O(2) plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O(2) plasma time and the number of thermal ALD cycles in a supercycle can be adjusted to achieve fine tuning of film resistivity and carrier concentration up to six orders of magnitude without extrinsic doping. The concentration of hydrogen defects are believed to play a major role in adjusting the electrical properties of ZnO films. Kelvin probe force microscopy results evidently show the shift of Fermi level in different ZnO films and are well associated with the changing of carrier concentration. This reliable and robust technique reported here clearly points towards the capability of using this method to produce ZnO films with controlled properties in different applications. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1186/s11671-017-2308-1) contains supplementary material, which is available to authorized users. Springer US 2017-09-19 /pmc/articles/PMC5605484/ /pubmed/28929410 http://dx.doi.org/10.1186/s11671-017-2308-1 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Nano Express Huang, Ruomeng Ye, Sheng Sun, Kai Kiang, Kian S. de Groot, C. H. (Kees) Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
title | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
title_full | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
title_fullStr | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
title_full_unstemmed | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
title_short | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
title_sort | fermi level tuning of zno films through supercycled atomic layer deposition |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5605484/ https://www.ncbi.nlm.nih.gov/pubmed/28929410 http://dx.doi.org/10.1186/s11671-017-2308-1 |
work_keys_str_mv | AT huangruomeng fermileveltuningofznofilmsthroughsupercycledatomiclayerdeposition AT yesheng fermileveltuningofznofilmsthroughsupercycledatomiclayerdeposition AT sunkai fermileveltuningofznofilmsthroughsupercycledatomiclayerdeposition AT kiangkians fermileveltuningofznofilmsthroughsupercycledatomiclayerdeposition AT degrootchkees fermileveltuningofznofilmsthroughsupercycledatomiclayerdeposition |