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Fast and slow transient charging of Oxide Semiconductor Transistors
The comprehension of the governing mechanism which affects device instability is one of the most important requirements for the formation of reliable oxide-thin film transistors (TFTs). However, a quantitative analysis of the dominant mechanism of device instability, which stems from charge trapping...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2017
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5605542/ https://www.ncbi.nlm.nih.gov/pubmed/28928390 http://dx.doi.org/10.1038/s41598-017-12155-3 |