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Growth of Epitaxial ZnSn(x)Ge(1−x)N(2) Alloys by MBE
ZnSn(x)Ge(1−x)N(2) alloys are chemically miscible semiconductor compounds with potential application as earth-abundant alternatives to In(x)Ga(1−x)N. Preparation of ZnSn(x)Ge(1−x)N(2) thin-films by reactive RF sputter deposition yield low-mobility, nanocrystalline films. In contrast, the growth of Z...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5607306/ https://www.ncbi.nlm.nih.gov/pubmed/28931912 http://dx.doi.org/10.1038/s41598-017-12357-9 |