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Growth of Epitaxial ZnSn(x)Ge(1−x)N(2) Alloys by MBE

ZnSn(x)Ge(1−x)N(2) alloys are chemically miscible semiconductor compounds with potential application as earth-abundant alternatives to In(x)Ga(1−x)N. Preparation of ZnSn(x)Ge(1−x)N(2) thin-films by reactive RF sputter deposition yield low-mobility, nanocrystalline films. In contrast, the growth of Z...

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Detalles Bibliográficos
Autores principales:	Shing, Amanda M., Tolstova, Yulia, Lewis, Nathan S., Atwater, Harry A.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5607306/ https://www.ncbi.nlm.nih.gov/pubmed/28931912 http://dx.doi.org/10.1038/s41598-017-12357-9

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