Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene...

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Detalles Bibliográficos
Autores principales: Llinas, Juan Pablo, Fairbrother, Andrew, Borin Barin, Gabriela, Shi, Wu, Lee, Kyunghoon, Wu, Shuang, Yong Choi, Byung, Braganza, Rohit, Lear, Jordan, Kau, Nicholas, Choi, Wonwoo, Chen, Chen, Pedramrazi, Zahra, Dumslaff, Tim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Fischer, Felix, Zettl, Alex, Ruffieux, Pascal, Yablonovitch, Eli, Crommie, Michael, Fasel, Roman, Bokor, Jeffrey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5608806/
https://www.ncbi.nlm.nih.gov/pubmed/28935943
http://dx.doi.org/10.1038/s41467-017-00734-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5608806/
https://www.ncbi.nlm.nih.gov/pubmed/28935943
http://dx.doi.org/10.1038/s41467-017-00734-x

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