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Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate
Growing III-V semiconductor materials on Si substrates for opto-electronic applications is challenging because their high lattice mismatch and different thermal expansion coefficients cause the epitaxial layers to have low quality. Here we report the growth of a high-quality AlN template on a micro-...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2017
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610239/ https://www.ncbi.nlm.nih.gov/pubmed/28939802 http://dx.doi.org/10.1038/s41598-017-11757-1 |