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Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate

Growing III-V semiconductor materials on Si substrates for opto-electronic applications is challenging because their high lattice mismatch and different thermal expansion coefficients cause the epitaxial layers to have low quality. Here we report the growth of a high-quality AlN template on a micro-...

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Autores principales: Tran, Binh Tinh, Hirayama, Hideki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610239/
https://www.ncbi.nlm.nih.gov/pubmed/28939802
http://dx.doi.org/10.1038/s41598-017-11757-1
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author Tran, Binh Tinh
Hirayama, Hideki
author_facet Tran, Binh Tinh
Hirayama, Hideki
author_sort Tran, Binh Tinh
collection PubMed
description Growing III-V semiconductor materials on Si substrates for opto-electronic applications is challenging because their high lattice mismatch and different thermal expansion coefficients cause the epitaxial layers to have low quality. Here we report the growth of a high-quality AlN template on a micro-circle-patterned Si substrate by using NH(3) pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. Then, we fabricated and characterized a deep-ultraviolet light-emitting diode (UV-LED) device using this AlN/patterned Si. By using standard lithography and inductively coupled plasma etching, the Si substrate was prepared with very high pattern density and was made deep enough to grow a thick AlN template with high crystal quality and very few threading dislocations, allowing for further re-growth of the deep UV-LED device. And by combining a transparent p-AlGaN contact layer, an electron blocking layer and using this high quality AlN template: a deep UV-LED device fabricated and showed a strong single sharp electroluminescence (EL) peak at 325 nm and achieved an external quantum efficiency (EQE) of about 0.03%, for a deep UV-LED grown on Si substrate.
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spelling pubmed-56102392017-10-10 Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate Tran, Binh Tinh Hirayama, Hideki Sci Rep Article Growing III-V semiconductor materials on Si substrates for opto-electronic applications is challenging because their high lattice mismatch and different thermal expansion coefficients cause the epitaxial layers to have low quality. Here we report the growth of a high-quality AlN template on a micro-circle-patterned Si substrate by using NH(3) pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. Then, we fabricated and characterized a deep-ultraviolet light-emitting diode (UV-LED) device using this AlN/patterned Si. By using standard lithography and inductively coupled plasma etching, the Si substrate was prepared with very high pattern density and was made deep enough to grow a thick AlN template with high crystal quality and very few threading dislocations, allowing for further re-growth of the deep UV-LED device. And by combining a transparent p-AlGaN contact layer, an electron blocking layer and using this high quality AlN template: a deep UV-LED device fabricated and showed a strong single sharp electroluminescence (EL) peak at 325 nm and achieved an external quantum efficiency (EQE) of about 0.03%, for a deep UV-LED grown on Si substrate. Nature Publishing Group UK 2017-09-22 /pmc/articles/PMC5610239/ /pubmed/28939802 http://dx.doi.org/10.1038/s41598-017-11757-1 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Tran, Binh Tinh
Hirayama, Hideki
Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate
title Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate
title_full Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate
title_fullStr Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate
title_full_unstemmed Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate
title_short Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate
title_sort growth and fabrication of high external quantum efficiency algan-based deep ultraviolet light-emitting diode grown on pattern si substrate
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610239/
https://www.ncbi.nlm.nih.gov/pubmed/28939802
http://dx.doi.org/10.1038/s41598-017-11757-1
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