Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film

We introduced a novel water-gated field effect transistor (WG-FET) which uses 16-nm-thick mono-Si film as active layer. WG-FET devices use electrical double layer (EDL) as gate insulator and operate under 1 V without causing any electrochemical reactions. Performance parameters based on voltage dist...

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Detalles Bibliográficos
Autores principales: Sonmez, Bedri Gurkan, Ertop, Ozan, Mutlu, Senol
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610243/
https://www.ncbi.nlm.nih.gov/pubmed/28939829
http://dx.doi.org/10.1038/s41598-017-12439-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610243/
https://www.ncbi.nlm.nih.gov/pubmed/28939829
http://dx.doi.org/10.1038/s41598-017-12439-8

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