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Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film
We introduced a novel water-gated field effect transistor (WG-FET) which uses 16-nm-thick mono-Si film as active layer. WG-FET devices use electrical double layer (EDL) as gate insulator and operate under 1 V without causing any electrochemical reactions. Performance parameters based on voltage dist...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610243/ https://www.ncbi.nlm.nih.gov/pubmed/28939829 http://dx.doi.org/10.1038/s41598-017-12439-8 |
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author | Sonmez, Bedri Gurkan Ertop, Ozan Mutlu, Senol |
author_facet | Sonmez, Bedri Gurkan Ertop, Ozan Mutlu, Senol |
author_sort | Sonmez, Bedri Gurkan |
collection | PubMed |
description | We introduced a novel water-gated field effect transistor (WG-FET) which uses 16-nm-thick mono-Si film as active layer. WG-FET devices use electrical double layer (EDL) as gate insulator and operate under 1 V without causing any electrochemical reactions. Performance parameters based on voltage distribution on EDL are extracted and current-voltage relations are modelled. Both probe- and planar-gate WG-FETs with insulated and uninsulated source-drain electrodes are simulated, fabricated and tested. Best on/off ratios are measured for probe-gate devices as 23,000 A/A and 85,000 A/A with insulated and uninsulated source-drain electrodes, respectively. Planar-gate devices with source-drain insulation had inferior on/off ratio of 1,100 A/A with 600 μm gate distance and it decreased to 45 A/A when gate distance is increased to 3000 μm. Without source-drain electrode insulation, proper transistor operation is not obtained with planar-gate devices. All measurement results were in agreement with theoretical models. WG-FET is a promising device platform for microfluidic applications where sensors and read-out circuits can be integrated at transistor level. |
format | Online Article Text |
id | pubmed-5610243 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-56102432017-10-10 Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film Sonmez, Bedri Gurkan Ertop, Ozan Mutlu, Senol Sci Rep Article We introduced a novel water-gated field effect transistor (WG-FET) which uses 16-nm-thick mono-Si film as active layer. WG-FET devices use electrical double layer (EDL) as gate insulator and operate under 1 V without causing any electrochemical reactions. Performance parameters based on voltage distribution on EDL are extracted and current-voltage relations are modelled. Both probe- and planar-gate WG-FETs with insulated and uninsulated source-drain electrodes are simulated, fabricated and tested. Best on/off ratios are measured for probe-gate devices as 23,000 A/A and 85,000 A/A with insulated and uninsulated source-drain electrodes, respectively. Planar-gate devices with source-drain insulation had inferior on/off ratio of 1,100 A/A with 600 μm gate distance and it decreased to 45 A/A when gate distance is increased to 3000 μm. Without source-drain electrode insulation, proper transistor operation is not obtained with planar-gate devices. All measurement results were in agreement with theoretical models. WG-FET is a promising device platform for microfluidic applications where sensors and read-out circuits can be integrated at transistor level. Nature Publishing Group UK 2017-09-22 /pmc/articles/PMC5610243/ /pubmed/28939829 http://dx.doi.org/10.1038/s41598-017-12439-8 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Sonmez, Bedri Gurkan Ertop, Ozan Mutlu, Senol Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film |
title | Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film |
title_full | Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film |
title_fullStr | Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film |
title_full_unstemmed | Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film |
title_short | Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film |
title_sort | modelling and realization of a water-gated field effect transistor (wg-fet) using 16-nm-thick mono-si film |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610243/ https://www.ncbi.nlm.nih.gov/pubmed/28939829 http://dx.doi.org/10.1038/s41598-017-12439-8 |
work_keys_str_mv | AT sonmezbedrigurkan modellingandrealizationofawatergatedfieldeffecttransistorwgfetusing16nmthickmonosifilm AT ertopozan modellingandrealizationofawatergatedfieldeffecttransistorwgfetusing16nmthickmonosifilm AT mutlusenol modellingandrealizationofawatergatedfieldeffecttransistorwgfetusing16nmthickmonosifilm |