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Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film
We introduced a novel water-gated field effect transistor (WG-FET) which uses 16-nm-thick mono-Si film as active layer. WG-FET devices use electrical double layer (EDL) as gate insulator and operate under 1 V without causing any electrochemical reactions. Performance parameters based on voltage dist...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610243/ https://www.ncbi.nlm.nih.gov/pubmed/28939829 http://dx.doi.org/10.1038/s41598-017-12439-8 |