Physical origins of current and temperature controlled negative differential resistances in NbO(2)

Negative differential resistance behavior in oxide memristors, especially those using NbO(2), is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a rel...

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Detalles Bibliográficos
Autores principales: Kumar, Suhas, Wang, Ziwen, Davila, Noraica, Kumari, Niru, Norris, Kate J., Huang, Xiaopeng, Strachan, John Paul, Vine, David, Kilcoyne, A.L. David, Nishi, Yoshio, Williams, R. Stanley
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610340/
https://www.ncbi.nlm.nih.gov/pubmed/28939848
http://dx.doi.org/10.1038/s41467-017-00773-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610340/
https://www.ncbi.nlm.nih.gov/pubmed/28939848
http://dx.doi.org/10.1038/s41467-017-00773-4

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