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Physical origins of current and temperature controlled negative differential resistances in NbO(2)
Negative differential resistance behavior in oxide memristors, especially those using NbO(2), is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a rel...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610340/ https://www.ncbi.nlm.nih.gov/pubmed/28939848 http://dx.doi.org/10.1038/s41467-017-00773-4 |