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Heat-Assisted Multiferroic Solid-State Memory

A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO(3) antiferroelectric layer and Ni(81)Fe(19) magnetic free layer. Information is stored as magnetisation direction in the free layer of a magnetic tunnel junction element. The bit writing process i...

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Detalles Bibliográficos
Autores principales: Lepadatu, Serban, Vopson, Melvin M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5615646/
https://www.ncbi.nlm.nih.gov/pubmed/28841185
http://dx.doi.org/10.3390/ma10090991