Near room temperature chemical vapor deposition of graphene with diluted methane and molten gallium catalyst

Direct growth of graphene integrated into electronic devices is highly desirable but difficult due to the nominal ~1000 °C chemical vapor deposition (CVD) temperature, which can seriously deteriorate the substrates. Here we report a great reduction of graphene CVD temperature, down to 50 °C on sapph...

Descripción completa

Detalles Bibliográficos
Autores principales: Fujita, Jun-ichi, Hiyama, Takaki, Hirukawa, Ayaka, Kondo, Takahiro, Nakamura, Junji, Ito, Shin-ichi, Araki, Ryosuke, Ito, Yoshikazu, Takeguchi, Masaki, Pai, Woei Wu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5620074/
https://www.ncbi.nlm.nih.gov/pubmed/28959046
http://dx.doi.org/10.1038/s41598-017-12380-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5620074/
https://www.ncbi.nlm.nih.gov/pubmed/28959046
http://dx.doi.org/10.1038/s41598-017-12380-w

Ejemplares similares