Interface Characteristics of Sapphire Direct Bonding for High-Temperature Applications

In this letter, we present a sapphire direct bonding method using plasma surface activation, hydrophilic pre-bonding, and high temperature annealing. Through the combination of sapphire inductively coupled plasma etching and the direct bonding process, a vacuum-sealed cavity employable for high temp...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Wangwang, Liang, Ting, Chen, Yulei, Jia, Pinggang, Xiong, Jijun, Hong, Yingping, Lei, Cheng, Yao, Zong, Qi, Lei, Liu, Wenyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5621027/
https://www.ncbi.nlm.nih.gov/pubmed/28892010
http://dx.doi.org/10.3390/s17092080

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5621027/
https://www.ncbi.nlm.nih.gov/pubmed/28892010
http://dx.doi.org/10.3390/s17092080

Ejemplares similares