Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe(2)O(4) Thin Film

Resistive Switching in oxides has offered new opportunities for developing resistive random access memory (ReRAM) devices. Here we demonstrated bipolar Resistive Switching along with magnetization switching of cobalt ferrite (CFO) thin film using Al/CFO/FTO sandwich structure, which makes it a poten...

Descripción completa

Detalles Bibliográficos
Autores principales: Munjal, Sandeep, Khare, Neeraj
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5622061/
https://www.ncbi.nlm.nih.gov/pubmed/28963521
http://dx.doi.org/10.1038/s41598-017-12579-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5622061/
https://www.ncbi.nlm.nih.gov/pubmed/28963521
http://dx.doi.org/10.1038/s41598-017-12579-x

Ejemplares similares