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Large-Area WS(2) Film with Big Single Domains Grown by Chemical Vapor Deposition
High-quality WS(2) film with the single domain size up to 400 μm was grown on Si/SiO(2) wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS(2) film have been investigated in detail, including the choice of precu...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5626679/ https://www.ncbi.nlm.nih.gov/pubmed/28975587 http://dx.doi.org/10.1186/s11671-017-2329-9 |