Large-Area WS(2) Film with Big Single Domains Grown by Chemical Vapor Deposition

High-quality WS(2) film with the single domain size up to 400 μm was grown on Si/SiO(2) wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS(2) film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS(2) film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS(2) film. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1186/s11671-017-2329-9) contains supplementary material, which is available to authorized users.