Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors

Microjunction InAs/InAs(1−x)Sb(x) type-II superlattice-based long-wavelength infrared photodetectors with reduced dark current density were demonstrated. A double electron barrier design was employed to reduce both bulk and surface dark currents. The photodetectors exhibited low surface leakage afte...

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Detalles Bibliográficos
Autores principales: Chevallier, Romain, Haddadi, Abbas, Razeghi, Manijeh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5626697/
https://www.ncbi.nlm.nih.gov/pubmed/28974769
http://dx.doi.org/10.1038/s41598-017-13016-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5626697/
https://www.ncbi.nlm.nih.gov/pubmed/28974769
http://dx.doi.org/10.1038/s41598-017-13016-9

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