Tuning the electrical transport of type II Weyl semimetal WTe(2) nanodevices by Ga+ ion implantation

Here we introduce lattice defects in WTe(2) by Ga+ implantation (GI), and study the effects of defects on the transport properties and electronic structures of the samples. Theoretical calculation shows that Te Frenkel defects is the dominant defect type, and Raman characterization results agree wit...

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Detalles Bibliográficos
Autores principales: Fu, Dongzhi, Zhang, Bingwen, Pan, Xingchen, Fei, Fucong, Chen, Yongda, Gao, Ming, Wu, Shuyi, He, Jian, Bai, Zhanbin, Pan, Yiming, Zhang, Qinfang, Wang, Xuefeng, Wu, Xinglong, Song, Fengqi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5627286/
https://www.ncbi.nlm.nih.gov/pubmed/28978938
http://dx.doi.org/10.1038/s41598-017-12865-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5627286/
https://www.ncbi.nlm.nih.gov/pubmed/28978938
http://dx.doi.org/10.1038/s41598-017-12865-8

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