Selective-area growth of single-crystal wurtzite GaN nanorods on SiO(x)/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing

Selective-area growth (SAG) of single-crystal wurtzite GaN nanorods (NRs) directly onto Si(001) substrates with un-etched native SiO(x) amorphous layer, assisted by a patterning TiN(x) mask fabricated by nanosphere lithography (NSL), has been realized by reactive magnetron sputter epitaxy (MSE). The...

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Detalles Bibliográficos
Autores principales: Serban, Elena Alexandra, Palisaitis, Justinas, Yeh, Chia-Cheng, Hsu, Hsu-Cheng, Tsai, Yu-Lin, Kuo, Hao-Chung, Junaid, Muhammad, Hultman, Lars, Persson, Per Ola Åke, Birch, Jens, Hsiao, Ching-Lien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5629253/
https://www.ncbi.nlm.nih.gov/pubmed/28983102
http://dx.doi.org/10.1038/s41598-017-12702-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5629253/
https://www.ncbi.nlm.nih.gov/pubmed/28983102
http://dx.doi.org/10.1038/s41598-017-12702-y

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