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Selective-area growth of single-crystal wurtzite GaN nanorods on SiO(x)/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing
Selective-area growth (SAG) of single-crystal wurtzite GaN nanorods (NRs) directly onto Si(001) substrates with un-etched native SiO(x) amorphous layer, assisted by a patterning TiN(x) mask fabricated by nanosphere lithography (NSL), has been realized by reactive magnetron sputter epitaxy (MSE). The...
Autores principales: | Serban, Elena Alexandra, Palisaitis, Justinas, Yeh, Chia-Cheng, Hsu, Hsu-Cheng, Tsai, Yu-Lin, Kuo, Hao-Chung, Junaid, Muhammad, Hultman, Lars, Persson, Per Ola Åke, Birch, Jens, Hsiao, Ching-Lien |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5629253/ https://www.ncbi.nlm.nih.gov/pubmed/28983102 http://dx.doi.org/10.1038/s41598-017-12702-y |
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