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Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the m-plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick m-plane In(0.12)Ga(0.88)N can be coherently grown on ZnO substra...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5634446/ https://www.ncbi.nlm.nih.gov/pubmed/28993638 http://dx.doi.org/10.1038/s41598-017-12518-w |