Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO

m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the m-plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick m-plane In(0.12)Ga(0.88)N can be coherently grown on ZnO substra...

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Detalles Bibliográficos
Autores principales: Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5634446/
https://www.ncbi.nlm.nih.gov/pubmed/28993638
http://dx.doi.org/10.1038/s41598-017-12518-w
Descripción
Sumario:m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the m-plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick m-plane In(0.12)Ga(0.88)N can be coherently grown on ZnO substrates, which is explained well by theoretical calculations based on an energy-balance model. The coherently grown m-plane InGaN on ZnO exhibited narrow X-ray rocking curves compared with the m-plane GaN grown on ZnO. These results demonstrate the benefit of lattice-matched ZnO substrates for epitaxy of high-quality nonpolar InGaN films.

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