Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO

m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the m-plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick m-plane In(0.12)Ga(0.88)N can be coherently grown on ZnO substra...

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Autores principales: Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5634446/
https://www.ncbi.nlm.nih.gov/pubmed/28993638
http://dx.doi.org/10.1038/s41598-017-12518-w
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author Kobayashi, Atsushi
Ohta, Jitsuo
Fujioka, Hiroshi
author_facet Kobayashi, Atsushi
Ohta, Jitsuo
Fujioka, Hiroshi
author_sort Kobayashi, Atsushi
collection PubMed
description m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the m-plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick m-plane In(0.12)Ga(0.88)N can be coherently grown on ZnO substrates, which is explained well by theoretical calculations based on an energy-balance model. The coherently grown m-plane InGaN on ZnO exhibited narrow X-ray rocking curves compared with the m-plane GaN grown on ZnO. These results demonstrate the benefit of lattice-matched ZnO substrates for epitaxy of high-quality nonpolar InGaN films.
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spelling pubmed-56344462017-10-18 Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO Kobayashi, Atsushi Ohta, Jitsuo Fujioka, Hiroshi Sci Rep Article m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the m-plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick m-plane In(0.12)Ga(0.88)N can be coherently grown on ZnO substrates, which is explained well by theoretical calculations based on an energy-balance model. The coherently grown m-plane InGaN on ZnO exhibited narrow X-ray rocking curves compared with the m-plane GaN grown on ZnO. These results demonstrate the benefit of lattice-matched ZnO substrates for epitaxy of high-quality nonpolar InGaN films. Nature Publishing Group UK 2017-10-09 /pmc/articles/PMC5634446/ /pubmed/28993638 http://dx.doi.org/10.1038/s41598-017-12518-w Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Kobayashi, Atsushi
Ohta, Jitsuo
Fujioka, Hiroshi
Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
title Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
title_full Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
title_fullStr Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
title_full_unstemmed Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
title_short Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
title_sort pulsed sputtering epitaxial growth of m-plane ingan lattice-matched to zno
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5634446/
https://www.ncbi.nlm.nih.gov/pubmed/28993638
http://dx.doi.org/10.1038/s41598-017-12518-w
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