Large Lateral Photovoltaic Effect in MoS(2)/GaAs Heterojunction

Molybdenum disulfide (MoS(2)) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS(2)/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS(2)/GaAs heterojunctions is investigated. The results show that a large LPE c...

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Detalles Bibliográficos
Autores principales: Hao, Lanzhong, Liu, Yunjie, Han, Zhide, Xu, Zhijie, Zhu, Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5635143/
https://www.ncbi.nlm.nih.gov/pubmed/29019043
http://dx.doi.org/10.1186/s11671-017-2334-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5635143/
https://www.ncbi.nlm.nih.gov/pubmed/29019043
http://dx.doi.org/10.1186/s11671-017-2334-z

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