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Large Lateral Photovoltaic Effect in MoS(2)/GaAs Heterojunction
Molybdenum disulfide (MoS(2)) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS(2)/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS(2)/GaAs heterojunctions is investigated. The results show that a large LPE c...
Autores principales: | Hao, Lanzhong, Liu, Yunjie, Han, Zhide, Xu, Zhijie, Zhu, Jun |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5635143/ https://www.ncbi.nlm.nih.gov/pubmed/29019043 http://dx.doi.org/10.1186/s11671-017-2334-z |
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