The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing

Further scale down the dimension of silicon-based integrated circuit is a crucial trend in semiconductor fabrication. One of the most critical issues in the nano-device fabrication is to confirm the atomic structure evolution of the ultrathin shallow junction. In this report, UV Raman spectroscopy,...

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Detalles Bibliográficos
Autores principales: Lee, Fu-Ying, Wu, Zong-Zhe, Kao, Li-Chi, Chang, Feng-Mei, Chen, Sheng-Wen, JangJian, Shiu-Ko, Cheng, Hui-Yu, Chen, Wei-Liang, Chang, Yu-Ming, Lo, Kuang Yao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5638925/
https://www.ncbi.nlm.nih.gov/pubmed/29026174
http://dx.doi.org/10.1038/s41598-017-13415-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5638925/
https://www.ncbi.nlm.nih.gov/pubmed/29026174
http://dx.doi.org/10.1038/s41598-017-13415-y

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