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The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing
Further scale down the dimension of silicon-based integrated circuit is a crucial trend in semiconductor fabrication. One of the most critical issues in the nano-device fabrication is to confirm the atomic structure evolution of the ultrathin shallow junction. In this report, UV Raman spectroscopy,...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5638925/ https://www.ncbi.nlm.nih.gov/pubmed/29026174 http://dx.doi.org/10.1038/s41598-017-13415-y |