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Dynamic annealing in Ge studied by pulsed ion beams
The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. Here, we study the dynamics of radiation defects in Ge in the temperature range of 100–160 °C under pulsed...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5640628/ https://www.ncbi.nlm.nih.gov/pubmed/29030564 http://dx.doi.org/10.1038/s41598-017-13161-1 |