Oscillatory electrostatic potential on graphene induced by group IV element decoration

The structures and electronic properties of partial C, Si and Ge decorated graphene were investigated by first-principles calculations. The calculations show that the interaction between graphene and the decoration patches is weak and the semiconductor patches act as agents for weak electron doping...

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Detalles Bibliográficos
Autores principales: Du, Chunyan, Yu, Liwei, Liu, Xiaojie, Liu, Lili, Wang, Cai-Zhuang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5640640/
https://www.ncbi.nlm.nih.gov/pubmed/29030602
http://dx.doi.org/10.1038/s41598-017-13603-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5640640/
https://www.ncbi.nlm.nih.gov/pubmed/29030602
http://dx.doi.org/10.1038/s41598-017-13603-w

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