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Oscillatory electrostatic potential on graphene induced by group IV element decoration
The structures and electronic properties of partial C, Si and Ge decorated graphene were investigated by first-principles calculations. The calculations show that the interaction between graphene and the decoration patches is weak and the semiconductor patches act as agents for weak electron doping...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5640640/ https://www.ncbi.nlm.nih.gov/pubmed/29030602 http://dx.doi.org/10.1038/s41598-017-13603-w |