Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al(2)O(3) with PO(x) Interlayer

[Image: see text] III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally obser...

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Detalles Bibliográficos
Autores principales: Black, L. E., Cavalli, A., Verheijen, M. A., Haverkort, J. E. M., Bakkers, E. P. A. M., Kessels, W. M. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5642000/
https://www.ncbi.nlm.nih.gov/pubmed/28885032
http://dx.doi.org/10.1021/acs.nanolett.7b02972

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5642000/
https://www.ncbi.nlm.nih.gov/pubmed/28885032
http://dx.doi.org/10.1021/acs.nanolett.7b02972

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