Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga(2)O(3) and its Effect on Power Devices

Understanding the origin of unintentional doping in Ga(2)O(3) is key to increasing breakdown voltages of Ga(2)O(3) based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in Ga(2)O(3). Previously unobs...

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Detalles Bibliográficos
Autores principales: Neal, Adam T., Mou, Shin, Lopez, Roberto, Li, Jian V., Thomson, Darren B., Chabak, Kelson D., Jessen, Gregg H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5643349/
https://www.ncbi.nlm.nih.gov/pubmed/29038456
http://dx.doi.org/10.1038/s41598-017-13656-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5643349/
https://www.ncbi.nlm.nih.gov/pubmed/29038456
http://dx.doi.org/10.1038/s41598-017-13656-x

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