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Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga(2)O(3) and its Effect on Power Devices
Understanding the origin of unintentional doping in Ga(2)O(3) is key to increasing breakdown voltages of Ga(2)O(3) based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in Ga(2)O(3). Previously unobs...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5643349/ https://www.ncbi.nlm.nih.gov/pubmed/29038456 http://dx.doi.org/10.1038/s41598-017-13656-x |