Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection

Silicon carbide (SiC) is a wide band-gap semiconductor material with many excellent properties, showing great potential in fusion neutron detection. The radiation resistance of 4H-SiC Schottky diode detectors was studied experimentally by carefully analyzing the detectors’ properties before and afte...

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Detalles Bibliográficos
Autores principales: Liu, Linyue, Liu, Ao, Bai, Song, Lv, Ling, Jin, Peng, Ouyang, Xiaoping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5645392/
https://www.ncbi.nlm.nih.gov/pubmed/29042625
http://dx.doi.org/10.1038/s41598-017-13715-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5645392/
https://www.ncbi.nlm.nih.gov/pubmed/29042625
http://dx.doi.org/10.1038/s41598-017-13715-3

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