Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS(2) transistor

Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logi...

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Detalles Bibliográficos
Autores principales: Li, Xiao-Xi, Fan, Zhi-Qiang, Liu, Pei-Zhi, Chen, Mao-Lin, Liu, Xin, Jia, Chuan-Kun, Sun, Dong-Ming, Jiang, Xiang-Wei, Han, Zheng, Bouchiat, Vincent, Guo, Jun-Jie, Chen, Jian-Hao, Zhang, Zhi-Dong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5645421/
https://www.ncbi.nlm.nih.gov/pubmed/29042545
http://dx.doi.org/10.1038/s41467-017-01128-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5645421/
https://www.ncbi.nlm.nih.gov/pubmed/29042545
http://dx.doi.org/10.1038/s41467-017-01128-9

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