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Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source

Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN(x) film on organic-based electronic devices, specifically, very hig...

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Detalles Bibliográficos
Autores principales: Kim, Ki Seok, Kim, Ki Hyun, Ji, You Jin, Park, Jin Woo, Shin, Jae Hee, Ellingboe, Albert Rogers, Yeom, Geun Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5648850/
https://www.ncbi.nlm.nih.gov/pubmed/29051604
http://dx.doi.org/10.1038/s41598-017-14122-4
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author Kim, Ki Seok
Kim, Ki Hyun
Ji, You Jin
Park, Jin Woo
Shin, Jae Hee
Ellingboe, Albert Rogers
Yeom, Geun Young
author_facet Kim, Ki Seok
Kim, Ki Hyun
Ji, You Jin
Park, Jin Woo
Shin, Jae Hee
Ellingboe, Albert Rogers
Yeom, Geun Young
author_sort Kim, Ki Seok
collection PubMed
description Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN(x) film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH(3)/SiH(4) at a low temperature of 80 °C. The thin deposited SiN(x) film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiN(x), respectively. The thin deposited SiN(x) film exhibited a low WVTR of 4.39 × 10(−4) g (m(2) · day)(−1) for a single thin (430 nm thick) film SiN(x) and the electrical characteristics of OLED devices before and after the thin SiN(x) film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiN(x) on the OLED device.
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spelling pubmed-56488502017-10-26 Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source Kim, Ki Seok Kim, Ki Hyun Ji, You Jin Park, Jin Woo Shin, Jae Hee Ellingboe, Albert Rogers Yeom, Geun Young Sci Rep Article Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN(x) film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH(3)/SiH(4) at a low temperature of 80 °C. The thin deposited SiN(x) film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiN(x), respectively. The thin deposited SiN(x) film exhibited a low WVTR of 4.39 × 10(−4) g (m(2) · day)(−1) for a single thin (430 nm thick) film SiN(x) and the electrical characteristics of OLED devices before and after the thin SiN(x) film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiN(x) on the OLED device. Nature Publishing Group UK 2017-10-19 /pmc/articles/PMC5648850/ /pubmed/29051604 http://dx.doi.org/10.1038/s41598-017-14122-4 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Kim, Ki Seok
Kim, Ki Hyun
Ji, You Jin
Park, Jin Woo
Shin, Jae Hee
Ellingboe, Albert Rogers
Yeom, Geun Young
Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source
title Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source
title_full Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source
title_fullStr Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source
title_full_unstemmed Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source
title_short Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source
title_sort silicon nitride deposition for flexible organic electronic devices by vhf (162 mhz)-pecvd using a multi-tile push-pull plasma source
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5648850/
https://www.ncbi.nlm.nih.gov/pubmed/29051604
http://dx.doi.org/10.1038/s41598-017-14122-4
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