Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface

Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine...

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Detalles Bibliográficos
Autores principales: Park, Jun Hong, Sanne, Atresh, Guo, Yuzheng, Amani, Matin, Zhang, Kehao, Movva, Hema C. P., Robinson, Joshua A., Javey, Ali, Robertson, John, Banerjee, Sanjay K., Kummel, Andrew C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2017
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5650486/
https://www.ncbi.nlm.nih.gov/pubmed/29062892
http://dx.doi.org/10.1126/sciadv.1701661

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5650486/
https://www.ncbi.nlm.nih.gov/pubmed/29062892
http://dx.doi.org/10.1126/sciadv.1701661

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