Conduction Mechanism and Improved Endurance in HfO(2)-Based RRAM with Nitridation Treatment

A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO(2)-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 10(9) c...

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Detalles Bibliográficos
Autores principales: Yuan, Fang-Yuan, Deng, Ning, Shih, Chih-Cheng, Tseng, Yi-Ting, Chang, Ting-Chang, Chang, Kuan-Chang, Wang, Ming-Hui, Chen, Wen-Chung, Zheng, Hao-Xuan, Wu, Huaqiang, Qian, He, Sze, Simon M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5658308/
https://www.ncbi.nlm.nih.gov/pubmed/29075921
http://dx.doi.org/10.1186/s11671-017-2330-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5658308/
https://www.ncbi.nlm.nih.gov/pubmed/29075921
http://dx.doi.org/10.1186/s11671-017-2330-3

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