A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al(2)O(3) passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well...

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Detalles Bibliográficos
Autores principales: Jo, Hyunjin, Choi, Jeong-Hun, Hyun, Cheol-Min, Seo, Seung-Young, Kim, Da Young, Kim, Chang-Min, Lee, Myoung-Jae, Kwon, Jung-Dae, Moon, Hyoung-Seok, Kwon, Se-Hun, Ahn, Ji-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5660217/
https://www.ncbi.nlm.nih.gov/pubmed/29079821
http://dx.doi.org/10.1038/s41598-017-14649-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5660217/
https://www.ncbi.nlm.nih.gov/pubmed/29079821
http://dx.doi.org/10.1038/s41598-017-14649-6

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