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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al(2)O(3) passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well...

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Autores principales: Jo, Hyunjin, Choi, Jeong-Hun, Hyun, Cheol-Min, Seo, Seung-Young, Kim, Da Young, Kim, Chang-Min, Lee, Myoung-Jae, Kwon, Jung-Dae, Moon, Hyoung-Seok, Kwon, Se-Hun, Ahn, Ji-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5660217/
https://www.ncbi.nlm.nih.gov/pubmed/29079821
http://dx.doi.org/10.1038/s41598-017-14649-6
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author Jo, Hyunjin
Choi, Jeong-Hun
Hyun, Cheol-Min
Seo, Seung-Young
Kim, Da Young
Kim, Chang-Min
Lee, Myoung-Jae
Kwon, Jung-Dae
Moon, Hyoung-Seok
Kwon, Se-Hun
Ahn, Ji-Hoon
author_facet Jo, Hyunjin
Choi, Jeong-Hun
Hyun, Cheol-Min
Seo, Seung-Young
Kim, Da Young
Kim, Chang-Min
Lee, Myoung-Jae
Kwon, Jung-Dae
Moon, Hyoung-Seok
Kwon, Se-Hun
Ahn, Ji-Hoon
author_sort Jo, Hyunjin
collection PubMed
description We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al(2)O(3) passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al(2)O(3) passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS(2) transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials.
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spelling pubmed-56602172017-11-01 A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels Jo, Hyunjin Choi, Jeong-Hun Hyun, Cheol-Min Seo, Seung-Young Kim, Da Young Kim, Chang-Min Lee, Myoung-Jae Kwon, Jung-Dae Moon, Hyoung-Seok Kwon, Se-Hun Ahn, Ji-Hoon Sci Rep Article We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al(2)O(3) passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al(2)O(3) passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS(2) transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials. Nature Publishing Group UK 2017-10-27 /pmc/articles/PMC5660217/ /pubmed/29079821 http://dx.doi.org/10.1038/s41598-017-14649-6 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Jo, Hyunjin
Choi, Jeong-Hun
Hyun, Cheol-Min
Seo, Seung-Young
Kim, Da Young
Kim, Chang-Min
Lee, Myoung-Jae
Kwon, Jung-Dae
Moon, Hyoung-Seok
Kwon, Se-Hun
Ahn, Ji-Hoon
A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title_full A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title_fullStr A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title_full_unstemmed A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title_short A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
title_sort hybrid gate dielectrics of ion gel with ultra-thin passivation layer for high-performance transistors based on two-dimensional semiconductor channels
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5660217/
https://www.ncbi.nlm.nih.gov/pubmed/29079821
http://dx.doi.org/10.1038/s41598-017-14649-6
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