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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al(2)O(3) passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5660217/ https://www.ncbi.nlm.nih.gov/pubmed/29079821 http://dx.doi.org/10.1038/s41598-017-14649-6 |
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author | Jo, Hyunjin Choi, Jeong-Hun Hyun, Cheol-Min Seo, Seung-Young Kim, Da Young Kim, Chang-Min Lee, Myoung-Jae Kwon, Jung-Dae Moon, Hyoung-Seok Kwon, Se-Hun Ahn, Ji-Hoon |
author_facet | Jo, Hyunjin Choi, Jeong-Hun Hyun, Cheol-Min Seo, Seung-Young Kim, Da Young Kim, Chang-Min Lee, Myoung-Jae Kwon, Jung-Dae Moon, Hyoung-Seok Kwon, Se-Hun Ahn, Ji-Hoon |
author_sort | Jo, Hyunjin |
collection | PubMed |
description | We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al(2)O(3) passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al(2)O(3) passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS(2) transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials. |
format | Online Article Text |
id | pubmed-5660217 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-56602172017-11-01 A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels Jo, Hyunjin Choi, Jeong-Hun Hyun, Cheol-Min Seo, Seung-Young Kim, Da Young Kim, Chang-Min Lee, Myoung-Jae Kwon, Jung-Dae Moon, Hyoung-Seok Kwon, Se-Hun Ahn, Ji-Hoon Sci Rep Article We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al(2)O(3) passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al(2)O(3) passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS(2) transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials. Nature Publishing Group UK 2017-10-27 /pmc/articles/PMC5660217/ /pubmed/29079821 http://dx.doi.org/10.1038/s41598-017-14649-6 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Jo, Hyunjin Choi, Jeong-Hun Hyun, Cheol-Min Seo, Seung-Young Kim, Da Young Kim, Chang-Min Lee, Myoung-Jae Kwon, Jung-Dae Moon, Hyoung-Seok Kwon, Se-Hun Ahn, Ji-Hoon A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels |
title | A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels |
title_full | A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels |
title_fullStr | A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels |
title_full_unstemmed | A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels |
title_short | A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels |
title_sort | hybrid gate dielectrics of ion gel with ultra-thin passivation layer for high-performance transistors based on two-dimensional semiconductor channels |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5660217/ https://www.ncbi.nlm.nih.gov/pubmed/29079821 http://dx.doi.org/10.1038/s41598-017-14649-6 |
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