Modulating the Voltage-sensitivity of a Genetically Encoded Voltage Indicator

Saturation mutagenesis was performed on a single position in the voltage-sensing domain (VSD) of a genetically encoded voltage indicator (GEVI). The VSD consists of four transmembrane helixes designated S1-S4. The V220 position located near the plasma membrane/extracellular interface had previously...

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Detalles Bibliográficos
Autores principales: Jung, Arong, Rajakumar, Dhanarajan, Yoon, Bong-June, Baker, Bradley J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Korean Society for Brain and Neural Science 2017
Materias:
Original Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5661057/
https://www.ncbi.nlm.nih.gov/pubmed/29093633
http://dx.doi.org/10.5607/en.2017.26.5.241

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5661057/
https://www.ncbi.nlm.nih.gov/pubmed/29093633
http://dx.doi.org/10.5607/en.2017.26.5.241

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