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Modulating the Voltage-sensitivity of a Genetically Encoded Voltage Indicator
Saturation mutagenesis was performed on a single position in the voltage-sensing domain (VSD) of a genetically encoded voltage indicator (GEVI). The VSD consists of four transmembrane helixes designated S1-S4. The V220 position located near the plasma membrane/extracellular interface had previously...
Autores principales: | Jung, Arong, Rajakumar, Dhanarajan, Yoon, Bong-June, Baker, Bradley J. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Korean Society for Brain and Neural Science
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5661057/ https://www.ncbi.nlm.nih.gov/pubmed/29093633 http://dx.doi.org/10.5607/en.2017.26.5.241 |
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