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85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
In this study, high internal-quantum-efficiency (IQE) AlGaN multiple quantum wells (MQWs) were successfully demonstrated on low-defect-density AlN templates with nano-patterned sapphire substrates. These templates consisted of AlN structures with 0∼30 periods superlattices (SLs) by alternating high...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5663757/ https://www.ncbi.nlm.nih.gov/pubmed/29089552 http://dx.doi.org/10.1038/s41598-017-14825-8 |