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85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
In this study, high internal-quantum-efficiency (IQE) AlGaN multiple quantum wells (MQWs) were successfully demonstrated on low-defect-density AlN templates with nano-patterned sapphire substrates. These templates consisted of AlN structures with 0∼30 periods superlattices (SLs) by alternating high...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5663757/ https://www.ncbi.nlm.nih.gov/pubmed/29089552 http://dx.doi.org/10.1038/s41598-017-14825-8 |
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author | Wang, Tzu-Yu Tasi, Chi-Tsung Lin, Chia-Feng Wuu, Dong-Sing |
author_facet | Wang, Tzu-Yu Tasi, Chi-Tsung Lin, Chia-Feng Wuu, Dong-Sing |
author_sort | Wang, Tzu-Yu |
collection | PubMed |
description | In this study, high internal-quantum-efficiency (IQE) AlGaN multiple quantum wells (MQWs) were successfully demonstrated on low-defect-density AlN templates with nano-patterned sapphire substrates. These templates consisted of AlN structures with 0∼30 periods superlattices (SLs) by alternating high (100) and low (25) V/III ratios under a low growth temperature (1130 °C). Compared to conventional high crystal-quality AlN epilayers achieved at temperatures ≥1300 °C, lower thermal budget can reduce the production cost and wafer warpage. Via optimization of the SL period, the AlN crystallinity was systematically improved. Strong dependence of SL period number on the X-ray full-width-at-half-maximum (FWHM) of the AlN epilayer was observed. The AlN template with 20-period SLs exhibited the lowest FWHM values for (0002) and (10ī2), namely 331 and 652 arcsec, respectively, as well as an ultra-low etching pit density of 1 × 10(5) cm(−2). The relative IQE of 280 nm AlGaN MQWs exhibited a dramatically increase from 22.8% to 85% when the inserted SL increased from 0 to 20 periods. It has hardly ever been reported for the AlGaN MQW sample. The results indicate that the engineered AlN templates have high potential applications in deep ultraviolet light emitters. |
format | Online Article Text |
id | pubmed-5663757 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-56637572017-11-08 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering Wang, Tzu-Yu Tasi, Chi-Tsung Lin, Chia-Feng Wuu, Dong-Sing Sci Rep Article In this study, high internal-quantum-efficiency (IQE) AlGaN multiple quantum wells (MQWs) were successfully demonstrated on low-defect-density AlN templates with nano-patterned sapphire substrates. These templates consisted of AlN structures with 0∼30 periods superlattices (SLs) by alternating high (100) and low (25) V/III ratios under a low growth temperature (1130 °C). Compared to conventional high crystal-quality AlN epilayers achieved at temperatures ≥1300 °C, lower thermal budget can reduce the production cost and wafer warpage. Via optimization of the SL period, the AlN crystallinity was systematically improved. Strong dependence of SL period number on the X-ray full-width-at-half-maximum (FWHM) of the AlN epilayer was observed. The AlN template with 20-period SLs exhibited the lowest FWHM values for (0002) and (10ī2), namely 331 and 652 arcsec, respectively, as well as an ultra-low etching pit density of 1 × 10(5) cm(−2). The relative IQE of 280 nm AlGaN MQWs exhibited a dramatically increase from 22.8% to 85% when the inserted SL increased from 0 to 20 periods. It has hardly ever been reported for the AlGaN MQW sample. The results indicate that the engineered AlN templates have high potential applications in deep ultraviolet light emitters. Nature Publishing Group UK 2017-10-31 /pmc/articles/PMC5663757/ /pubmed/29089552 http://dx.doi.org/10.1038/s41598-017-14825-8 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Wang, Tzu-Yu Tasi, Chi-Tsung Lin, Chia-Feng Wuu, Dong-Sing 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering |
title | 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering |
title_full | 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering |
title_fullStr | 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering |
title_full_unstemmed | 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering |
title_short | 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering |
title_sort | 85% internal quantum efficiency of 280-nm algan multiple quantum wells by defect engineering |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5663757/ https://www.ncbi.nlm.nih.gov/pubmed/29089552 http://dx.doi.org/10.1038/s41598-017-14825-8 |
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