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Ultra-Broadband, Lithography-Free, and Large-Scale Compatible Perfect Absorbers: The Optimum Choice of Metal layers in Metal-Insulator Multilayer Stacks

We report ultra-broadband perfect absorbers for visible and near-infrared applications that are based on multilayers of metal-insulator (MI) stacks fabricated employing straightforward layer deposition techniques and are, therefore, lithography-free and large-scale compatible. We scrutinize the impa...

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Autores principales: Abedini Dereshgi, Sina, Ghobadi, Amir, Hajian, Hodjat, Butun, Bayram, Ozbay, Ekmel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5665894/
https://www.ncbi.nlm.nih.gov/pubmed/29093519
http://dx.doi.org/10.1038/s41598-017-13837-8
_version_ 1783275204399595520
author Abedini Dereshgi, Sina
Ghobadi, Amir
Hajian, Hodjat
Butun, Bayram
Ozbay, Ekmel
author_facet Abedini Dereshgi, Sina
Ghobadi, Amir
Hajian, Hodjat
Butun, Bayram
Ozbay, Ekmel
author_sort Abedini Dereshgi, Sina
collection PubMed
description We report ultra-broadband perfect absorbers for visible and near-infrared applications that are based on multilayers of metal-insulator (MI) stacks fabricated employing straightforward layer deposition techniques and are, therefore, lithography-free and large-scale compatible. We scrutinize the impact of different physical parameters of an MIMI absorber structure with analysis of each contributing metal layer. After obtaining the optimal design parameters (i.e. material selection and their thicknesses) with both simulation and numerical analysis (Transfer Matrix Method) methods, an experimental sample is fabricated and characterized. Our fabricated MIMI absorber consists of an optically thick tungsten (W) back reflector layer followed by 80 nm aluminum oxide (Al(2)O(3)), 10 nm titanium (Ti), and finally another 80 nm Al(2)O(3). The experimental results demonstrate over 90 percent absorption between 400 nm and 1640 nm wavelengths that is optimized for ultra-broadband absorption in MIMI structures. Moreover, the impedance matching method with free-space is used to shed light on the metallic layer selection process.
format Online
Article
Text
id pubmed-5665894
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-56658942017-11-08 Ultra-Broadband, Lithography-Free, and Large-Scale Compatible Perfect Absorbers: The Optimum Choice of Metal layers in Metal-Insulator Multilayer Stacks Abedini Dereshgi, Sina Ghobadi, Amir Hajian, Hodjat Butun, Bayram Ozbay, Ekmel Sci Rep Article We report ultra-broadband perfect absorbers for visible and near-infrared applications that are based on multilayers of metal-insulator (MI) stacks fabricated employing straightforward layer deposition techniques and are, therefore, lithography-free and large-scale compatible. We scrutinize the impact of different physical parameters of an MIMI absorber structure with analysis of each contributing metal layer. After obtaining the optimal design parameters (i.e. material selection and their thicknesses) with both simulation and numerical analysis (Transfer Matrix Method) methods, an experimental sample is fabricated and characterized. Our fabricated MIMI absorber consists of an optically thick tungsten (W) back reflector layer followed by 80 nm aluminum oxide (Al(2)O(3)), 10 nm titanium (Ti), and finally another 80 nm Al(2)O(3). The experimental results demonstrate over 90 percent absorption between 400 nm and 1640 nm wavelengths that is optimized for ultra-broadband absorption in MIMI structures. Moreover, the impedance matching method with free-space is used to shed light on the metallic layer selection process. Nature Publishing Group UK 2017-11-01 /pmc/articles/PMC5665894/ /pubmed/29093519 http://dx.doi.org/10.1038/s41598-017-13837-8 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Abedini Dereshgi, Sina
Ghobadi, Amir
Hajian, Hodjat
Butun, Bayram
Ozbay, Ekmel
Ultra-Broadband, Lithography-Free, and Large-Scale Compatible Perfect Absorbers: The Optimum Choice of Metal layers in Metal-Insulator Multilayer Stacks
title Ultra-Broadband, Lithography-Free, and Large-Scale Compatible Perfect Absorbers: The Optimum Choice of Metal layers in Metal-Insulator Multilayer Stacks
title_full Ultra-Broadband, Lithography-Free, and Large-Scale Compatible Perfect Absorbers: The Optimum Choice of Metal layers in Metal-Insulator Multilayer Stacks
title_fullStr Ultra-Broadband, Lithography-Free, and Large-Scale Compatible Perfect Absorbers: The Optimum Choice of Metal layers in Metal-Insulator Multilayer Stacks
title_full_unstemmed Ultra-Broadband, Lithography-Free, and Large-Scale Compatible Perfect Absorbers: The Optimum Choice of Metal layers in Metal-Insulator Multilayer Stacks
title_short Ultra-Broadband, Lithography-Free, and Large-Scale Compatible Perfect Absorbers: The Optimum Choice of Metal layers in Metal-Insulator Multilayer Stacks
title_sort ultra-broadband, lithography-free, and large-scale compatible perfect absorbers: the optimum choice of metal layers in metal-insulator multilayer stacks
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5665894/
https://www.ncbi.nlm.nih.gov/pubmed/29093519
http://dx.doi.org/10.1038/s41598-017-13837-8
work_keys_str_mv AT abedinidereshgisina ultrabroadbandlithographyfreeandlargescalecompatibleperfectabsorberstheoptimumchoiceofmetallayersinmetalinsulatormultilayerstacks
AT ghobadiamir ultrabroadbandlithographyfreeandlargescalecompatibleperfectabsorberstheoptimumchoiceofmetallayersinmetalinsulatormultilayerstacks
AT hajianhodjat ultrabroadbandlithographyfreeandlargescalecompatibleperfectabsorberstheoptimumchoiceofmetallayersinmetalinsulatormultilayerstacks
AT butunbayram ultrabroadbandlithographyfreeandlargescalecompatibleperfectabsorberstheoptimumchoiceofmetallayersinmetalinsulatormultilayerstacks
AT ozbayekmel ultrabroadbandlithographyfreeandlargescalecompatibleperfectabsorberstheoptimumchoiceofmetallayersinmetalinsulatormultilayerstacks