Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors

By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening...

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Detalles Bibliográficos
Autores principales: Talbo, Vincent, Saint-Martin, Jérôme, Retailleau, Sylvie, Dollfus, Philippe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666037/
https://www.ncbi.nlm.nih.gov/pubmed/29093549
http://dx.doi.org/10.1038/s41598-017-14009-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5666037/
https://www.ncbi.nlm.nih.gov/pubmed/29093549
http://dx.doi.org/10.1038/s41598-017-14009-4

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